Patent · US Expired

Method for producing a wafer with a monocrystalline silicon carbide layer

US5471946A · kind A · utility

19Cited by

1References

5Claims

0Family size

Assignee

CS-GmbH Halbleiter-und Solartechnologie · DE

Inventors

Christoph Scholz · Schliersee, DE
Franz Koehl · Burghausen, DE
Thomas Weber · Ludwigshafen, DE

Key dates

Filing date	Oct 13, 1993
Grant date	Dec 5, 1995
Priority date	—
Expiry date	Oct 13, 2013

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/02664
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

To produce a large-surface wafer, a monocrystalline SiC layer (4) is grown epitaxially on a monocrystalline Si layer (1) provided with a nucleation layer (3) by carbonization. On the monocrystalline SiC layer (4), a polycrystalline SiC layer (5) is deposited. The Si layer is then etched away, resulting in a wafer consisting of a compound of monocrystalline and polycrystalline SiC layers (4, 5) and meeting the highest demands of semiconductor technology.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.