Apparatus for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates
US5472508A · kind A · utility
Inventor
Key dates
| Filing date | Jan 14, 1993 |
| Grant date | Dec 5, 1995 |
| Priority date | — |
| Expiry date | Jan 14, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/122
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An apparatus and method for chemical vapor deposition in which the reactants directed toward a substrate to be provided with one or more films are first subjected to an electric field. The electric field is applied between two electrodes and the reactants become polarized in the field, thus stretching their polarized chemical bonds close to the breaking point. The apparatus also applies voltage pulses between one of the electrodes and the substrate. By adjusting the pulse height, pulse width and pulse repetition rates, the chemical bonds of polarized reactants break to produce free radicals and some ions of the desired elements or compounds. The substrate is kept at a given temperature. The free radicals react to deposit the desired film of high purity on the substrate. The deposition characteristics of the deposited films in terms of isotropic, anisotropic and selective deposition are controlled by the pulse height, width, repetition rates and by other process parameters. Such parameters also control the grain size and orientation of the deposited films. By choosing appropriate reactants other than those for CVD, e.g., for reactive ion etching (RIE), in-situ cleaning prior to CVD,…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.