Process for making OHMIC contacts and photovoltaic cell with ohmic contact
US5472910A · kind A · utility
11Cited by
10References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 1994 |
| Grant date | Dec 5, 1995 |
| Priority date | — |
| Expiry date | Mar 16, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/064
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Ohmic contacts to p-type IIB/VIB semiconductor are obtained by a process which includes the step of depositing a viscous liquid containing a Group IB metal salt on a surface of a semiconductor, substantially free of oxide groups, heating to form a dried layer, removing the dried layer, washing the surface to remove residual by-products and drying the surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.