Method of making an integrated circuit structure by using a non-conductive plug
US5472912A · kind A · utility
44Cited by
25References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 7, 1994 |
| Grant date | Dec 5, 1995 |
| Priority date | — |
| Expiry date | Nov 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive layer is formed over an insulating layer and extending down into a contact opening. An insulating layer is then deposited over the device and in the opening, and etched back to form a plug of dielectric material in the bottom of the opening. An aluminum layer is then deposited over the device and in the opening under such conditions as to cause a substantially complete fill of the opening by the aluminum, and result in a planar surface above the opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.