Semiconductor device and method for fabricating same
US5473184A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 2, 1994 |
| Grant date | Dec 5, 1995 |
| Priority date | — |
| Expiry date | Mar 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor substrate of a first conductivity type and a pair of spaced diffused layers of a second conductivity type different from the first conductivity type formed in surface portions of the semiconductor substrate. A gate electrode is formed on a channel region between the pair of diffused layers in the semiconductor substrate with an intermediate gate oxide layer disposed therebetween, and then a silicon dioxide film is formed to cover an upper surface and side surfaces of the gate electrode and surface portions of the substrate in which the pair of diffused layers is formed. A side wall made of polycrystalline silicon is formed to cover the silicon dioxide film on each of the side surfaces of the gate electrode and an interlayer insulating film is formed to cover the silicon dioxide film, the side wall and the substrate. Then, a contact hole is formed through the interlayer insulating film to reach one of the pair of diffused layers, wherein a part of the side wall is exposed within the contact hole and a surface of the exposed part of the side wall is oxidized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.