Method for growing transparent conductive gallium-indium-oxide films by sputtering
US5473456A · kind A · utility
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8References
9Claims
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Key dates
| Filing date | Oct 27, 1993 |
| Grant date | Dec 5, 1995 |
| Priority date | — |
| Expiry date | Oct 27, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Applicants have discovered that films of conductively doped GaInO.sub.3 grown on substrates by sputter deposition have conductivity comparable to conventional wide band-gap transparent conductors while exhibiting superior light transmission, particularly in the green and blue wavelength regions of the visible spectrum. Substrate temperatures ranged from 100.degree. C. to 550.degree. C. in an argon-oxygen ambient of total pressure 4 mTorr to 20 mTorr with an optimal oxygen partial pressure in the range 0.5 to 2 mTorr.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.