Method for filling via holes in a semiconductor layer structure

US5474651A · kind A · utility

Assignee

• Siemens Aktiengesellschaft · DE

Inventor

• Holger Huebner · Neustadt an der Aisch, DE

Key dates

• Filing date: Aug 11, 1994
• Grant date: Dec 12, 1995
• Expiry date: Aug 11, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H05K3/4644
• WIPO field: Audio-visual technology
• WIPO sector: Electrical engineering

Abstract

For filling via holes that extend onto interconnects to be contacted in a semiconductor layer structure, the interconnects are connected to a conductive layer through auxiliary via holes. The via holes are filled with metal by electro-deposition, whereby the interconnects are wired as a cooperating electrode in an electrolyte via an auxiliary contact to the conductive layer. Subsequently, the conductive layer is removed.