Thick film resistor compositions
US5474711A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 22, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Sep 22, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C8/22
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
To provide a thick film resistor involving small variations in resistance and TCR during the firing step and a low thermal coefficient of expansion. A thick film resistor composition containing 5-30 wt. % of a ruthenium pyrochlore oxide and 10-90 wt. % of a glass binder, wherein (1) the ruthenium pyrochlore oxide is PbRuO.sub.3, (2) the glass binder is a glass which contains a first glass containing 61-85 wt. % of PbO, 10-36% of SiO.sub.2 and 0-2 wt. % of B.sub.2 O.sub.3, the total content of the PbO, SiO.sub.2 and B.sub.2 O.sub.3 accounting for 95 wt. % or more of the first glass, and in which 2-20 wt. % of B.sub.2 O.sub.3 is contained in the entire glass binder, and (3) the first glass accounts for 5-30 wt. % of the thick film resistor composition, and the weight ratio of the ruthenium pyrochlore oxide to the first glass is 5:30-60:40.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.