Method of fabricating capacitor or contact for semiconductor device by forming uneven oxide film and reacting silicon with metal containing gas
US5474949A · kind A · utility
16Cited by
14References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 26, 1993 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Jan 26, 2013 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/964
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of the invention for fabricating a semiconductor device includes the steps of: forming an oxide film having a non-uniform thickness on silicon; reducing at least a portion of the oxide film using gas containing a metal element, and growing a metal film containing the metal element on the silicon by reacting an exposed surface of the silicon with the gas; and removing the metal film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.