Semiconductor device including an IGBT and a current-regenerative diode
US5475243A · kind A · utility
6Cited by
7References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 22, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Feb 22, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D12/441
Abstract
An insulated-gate bipolar transistor (IGBT) is connected in reverse-parallel with a current-regenerative diode which, for economy of manufacture, is integrated with the IGBT. Such a diode may extend laterally on an IGBT chip, with two conductivity regions forming the diode respectively connected to emitter and collector electrodes of the IGBT. Alternatively, the diode may be formed by short-circuiting a buffer layer and a collector layer. By such integration, greater device packing density can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.