Field-effect voltage regulator diode
US5475245A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Sep 6, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/00
Abstract
A voltage regulator diode according to the present invention comprises: a semiconductor substrate (W); a highly doped source region (3) formed in the substrate (W) to adjoin one surface thereof; a highly doped drain region (D) formed in tile substrate (W) to adjoin the above-mentioned surface; a source electrode (4) held in contact with the source region (3); a shorting electrode (9) held in contact with the drain region (D); a gate insulating portion (8a) formed between the source region (3) and the drain region (4) to partly cover the above-mentioned surface of the substrate (W); and a gate electrode (10) formed to cover the gate insulating portion (8a). The gate electrode (19) is shorted to the drain region (D) through the shorting electrode (9). As a result, a channel (12) is formed in the substrate (W) to establish conduction between the source region (3) and the drain region (4) when a gate voltage not less than a predetermined threshold value is applied.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.