Opto-electronic integrated circuit
US5475256A · kind A · utility
10Cited by
1References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | May 2, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F3/08
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An opto-electronic integrated circuit is arranged to comprise a photodetector and a tunnel emitter bipolar transistor for first-stage amplification of a current generated in the photodetector, as formed on a substrate. The tunnel emitter bipolar transistor can be operated at high speed and has a high amplification factor, so that noise due to the base current can be reduced upon amplification of the current generated in the photodetector by light detection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.