Fourier plane image amplifier
US5475527A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 1994 |
| Grant date | Dec 12, 1995 |
| Priority date | — |
| Expiry date | Sep 26, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S3/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A solid state laser is frequency tripled to 0.3 .mu.m. A small portion of the laser is split off and generates a Stokes seed in a low power oscillator. The low power output passes through a mask with the appropriate hole pattern. Meanwhile, the bulk of the laser output is focused into a larger stimulated Brillouin scattering (SBS) amplifier. The low power beam is directed through the same cell in the opposite direction. The majority of the amplification takes place at the focus which is the fourier transform plane of the mask image. The small holes occupy large area at the focus and thus are preferentially amplified. The amplified output is now imaged onto the multichip module where the holes are drilled. Because of the fourier plane amplifier, only .about.1/10th the power of a competitive system is needed. This concept allows less expensive masks to be used in the process and requires much less laser power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.