Gas feeding device for controlled vaporization of an organometallic compound used in deposition film formation
US5476547A · kind A · utility
32Cited by
12References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 21, 1994 |
| Grant date | Dec 19, 1995 |
| Priority date | — |
| Expiry date | Apr 21, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B25/14
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A gas feeding device for feeding to a reaction vessel a starting gas for film formation by chemical vapor deposition. The gas feeding device is connected to a container which contains an organometallic compound, and has a plurality of gas introducing openings for introducing a carrier gas into the container for carrying vaporized organometallic compound into the reaction vessel. The gas feeding device includes an accelerating device which selects a carrier gas introducing route into the container through at least one of the plurality of gas introducing openings for accelerating the generation of the starting gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.