Method for evaluating epitaxial layers and test pattern for process evaluation
US5477325A · kind A · utility
7Cited by
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16Claims
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Key dates
| Filing date | Jun 3, 1994 |
| Grant date | Dec 19, 1995 |
| Priority date | — |
| Expiry date | Jun 3, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for evaluating thickness of a semiconductor layer epitaxially growing on a main surface of a substrate, a parallel stripe-shaped ridges extending are formed on the surface of the substrate, and a semiconductor layer is epitaxially grown on the surface of the substrate including the stripe-shaped ridges while irradiating the stripe-shaped ridges with light and monitoring from the stripe-shaped ridges to evaluate the thickness of the epitaxially growing semiconductor layer. The thickness of the epitaxial layer is evaluated with high precision during the epitaxial growth process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.