Chemical sensor for detecting binding reactions
US5478756A · kind A · utility
82Cited by
13References
13Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | Feb 8, 1995 |
| Grant date | Dec 26, 1995 |
| Priority date | — |
| Expiry date | Feb 8, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S436/806
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A chemical sensor includes a piezoelectric support (1) capable of supporting a shear horizontal wave provided on its surface with an electrode (2,3). The sensor is characterized in that the surface of the piezoelectric support (1) including the region bearing the electrode (2,3) is covered by a layer of dielectric material (9) of thickness 0.5 to 20 microns. The piezoelectric support (1) is preferably a single crystal. The dielectric layer (1) may be of, for example, silicon dioxide or a suitable polymer, and preferably has a thickness of between 0.5 and 5 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.