III-V system compound semiconductor device and method for manufacturing the semiconductor device
US5479028A · kind A · utility
6Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 27, 1994 |
| Grant date | Dec 26, 1995 |
| Priority date | — |
| Expiry date | Sep 27, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/05
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention relates to a method for manufacturing a III-V system compound semiconductor device, provides such a new C dopant as alkyl halide (CH.sub.2 I.sub.2 for example) containing carbon (C), iodine (I), and hydrogen (H) for giving a highly p-type conductivity to a GaAs crystal layer, an InGaAs crystal layer or the like as an object of it, and includes a process of forming a p-type III-V system compound semiconductor layer as using a compound containing carbon (C) as a dopant material for giving a p-type conductivity and further containing iodine (I) and hydrogen (H) as impurity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.