Monolithically integrated semiconductor arrangement with a cover electrode

US5479046A · kind A · utility

Assignee

• Robert Bosch GmbH · DE

Inventors

• Peter Flohrs · Reutlingen, DE
• Christian Pluntke · Hechingen, DE

Key dates

• Filing date: Jun 22, 1994
• Grant date: Dec 26, 1995
• Expiry date: Jun 22, 2014

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/111

Abstract

The invention relates to a monolithically integrated semiconductor arrangement, where from the first main surface a first zone (p) and a second zone (n.sup.+) are diffused into a substrate (2), which is weakly doped (substrate region n.sup.-) under a first main surface (3) and is more strongly doped (substrate region n.sup.+) under a second main surface (4). An insulating passivation layer is attached to the first main surface (3), on top of which a metallic cover electrode (D) is located, which covers adjacent substrate regions (n.sup.-) and the edge areas of the first zone (p) and the second zone (n.sup.+). In accordance with the invention, at least one additional zone (.nu.) of the same type of conductivity as the associated zone (n.sup.+), but with weaker doping, is diffused in for increasing the break-through voltage, and is connected to the zone (n.sup.+), does not contact the other zone (p) and prevents the zone (n.sup.+) from directly bordering the substrate (n.sup.-) underneath the cover electrode (D).