Integrated circuit metal-oxide-metal capacitor and method of making same

US5479316A · kind A · utility

Assignee

• Analog Devices, Inc. · US

Inventors

• Mark A. Smrtic · Stoneham, US
• George M. Molnar · Westford, US
• Jerome F. Lapham · Groton, US

Key dates

• Filing date: Aug 24, 1993
• Grant date: Dec 26, 1995
• Expiry date: Aug 24, 2013

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/435

Abstract

An integrated circuit metal-oxide-metal capacitor and method of making it which involves a support layer; a first conductive electrode on the support layer; a dielectric film on the first conductive electrode; a second conductive electrode disposed on the dielectric film and formed from the first level metallization interconnect layer of the integrated circuit; an interlevel dielectric layer; a first contact via extending through the interlevel dielectric layer and the dielectric film to the first conductive electrode; a second contact via extending through the interlevel dielectric layer to the second conductive electrode; and first and second terminals formed from the second level metallization interconnect layer of the integrated circuit contacting the first and second vias, respectively.