Photomask and method of forming resist pattern using the same
US5480746A · kind A · utility
38Cited by
2References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 16, 1994 |
| Grant date | Jan 2, 1996 |
| Priority date | — |
| Expiry date | May 16, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/30
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photomask for use in forming a photoresist pattern by projection exposure, comprising opaque stripes respectively arranged on a mask substrate at a given pitch and phase shifters formed alternately on light-transmissive areas between said opaque stripes. The widths of the opaque stripes are larger than those of said light-transmissive areas whereby the edges of said phase shifters on said light-transmissive areas are prevented from being transferred to a wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.