Method of forming a self-aligned capacitor
US5480831A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 15, 1995 |
| Grant date | Jan 2, 1996 |
| Priority date | — |
| Expiry date | Mar 15, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
A self-aligned capacitor structure and method of making it includes an insulating support substrate with the capacitor disposed on the insulating substrate with a first conducting extending across the capacitor in the first dimension. The capacitor includes a first electrode interconnected with the first conductor, a second electrode supported by the substrate and interconnected with the second conductor, and a dielectric medium between the first and second electrodes. The first and second electrodes being coterminous in both directions in the first dimension for eliminating parasitic capacitance between the first conductor and the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.