Semiconductor laser structure for improved stability of the threshold current with respect to changes in the ambient temperature
US5483547A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 10, 1994 |
| Grant date | Jan 9, 1996 |
| Priority date | — |
| Expiry date | May 10, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A Type II heterojunction formed of semiconductor material which normally forms a Type I heterojunction. The Type II heterojunction is created by using a carefully chosen stack of epitaxial semiconductor materials with modifications to the band structure through quantum mechanical confinement effects. This virtual type II heterojunction is incorporated adjacent to the active region in a single-quantum-well, ridge-waveguide laser structure. An anomalous "Negative-T.sub.o " region is observed in which threshold current decreases with increasing temperature. A reduction in the temperature sensitivity of the threshold current of the laser structure results.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.