High throughput reflectivity and resolution x-ray dispersive and reflective structures for the 100 eV to 5000 eV energy range and method of making the devices
US5485499A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 1994 |
| Grant date | Jan 16, 1996 |
| Priority date | — |
| Expiry date | Aug 5, 2014 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70233
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
X-ray dispersive and reflective structures utilizing special materials which exhibit improved performance in the specific ranges of interest. The structures are formed of alternating thin layers of uranium, uranium compound or uranium alloy and another spacer material consisting of elements or compounds with low absorptance chosen to match the wavelength of interest. These low index of refraction elements or compounds are those best suited for water window microscopy and nitrogen analysis, or are similar elements or compounds best suited for carbon analysis, boron analysis, and x-ray lithography. The structures are constructed using standard thin layer deposition techniques such as evaporation, sputtering, and CVD, or by novel methods which allow thinner and smoother layers to be deposited.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.