Method of manufacturing a semiconductor component, in particular a buried ridge laser
US5486489A · kind A · utility
3Cited by
0References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1994 |
| Grant date | Jan 23, 1996 |
| Priority date | — |
| Expiry date | Feb 3, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
In the method, a doped semiconductor coating is to be deposited on a disturbed surface (S) of a semiconductor base (9) doped with a dopant having the same conductivity type as the coating. According to the invention, prior to depositing a main layer (28) of the coating (10), a superdoped layer (24) is deposited, which superdoped layer has a dopant concentration that is greater than twice the mean concentration of the coating. The invention applies in particular to manufacturing a semiconductor laser for an optical fiber telecommunications system.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.