Plasma chemical vapor deposition device capable of suppressing generation of polysilane powder
US5487786A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 1994 |
| Grant date | Jan 30, 1996 |
| Priority date | — |
| Expiry date | Dec 22, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32724
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
There is provided a plasma CVD device which can deposit a high-quality a-Si:H or other film at a high rate, and which can improve production efficiency thereof remarkably. The CVD device has a substrate holding electrode and a high frequency application electrode arranged opposite to and parallel to a substrate held by the substrate holding electrode. A material gas introduced between the substrate holding electrode and the high frequency application electrode is decomposed by glow discharge, so that a thin film is deposited on the heated substrate. A first electrode heater for heating a peripheral portion of the high frequency application electrode is installed along the peripheral portion of the high frequency application electrode. A second electrode heater for heating the peripheral portion of the high frequency application electrode and a surface of the high frequency application electrode opposite to its surface facing the substrate is composed of a bottom portion and a side portion provided uprightly along a peripheral edge of the bottom portion and formed in a concave shape to surround the high frequency application electrode with a spacing therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.