Semiconductor light-emitting device with compound semiconductor layer
US5488233A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1994 |
| Grant date | Jan 30, 1996 |
| Priority date | — |
| Expiry date | Mar 11, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3077
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
This invention provides a semiconductor light-emitting device including a semiconductor substrate consisting of a compound semiconductor of elements in the third and fifth groups of the period table, a first compound semiconductor layer formed directly on at least a portion of the semiconductor substrate and consisting of a compound semiconductor containing at least In and P, and a second compound semiconductor formed directly on the first compound semiconductor layer and consisting of a compound semiconductor of elements in the second and sixth groups of the periodic table. With this arrangement, it is possible to sufficiently prevent the occurrence of defects in the interface between the semiconductor substrate and the second compound semiconductor layer consisting of the compound semiconductor of the elements in the second and sixth groups of the periodic table.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.