Diamond film structures and methods related to same
US5488350A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 7, 1994 |
| Grant date | Jan 30, 1996 |
| Priority date | — |
| Expiry date | Jan 7, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Novel structures are provided including laminated layers of the diamond film in different patterns for conducting, generating and/or absorbing thermal energy. In particular, a thermal sensor/heater is shown including a doped electrically conductive diamond film layer encapsulated by layers of undoped electrically insulative layers on a silicon wafer. Also, a GaAs/Si on diamond laminate structure is provided in which the diamond film acts as a substrate and a heat sink. Notably, the diamond film structures are characterized by their high thermal conductivity, high chemical resistance, and high hardness/wear resistance due to the properties of the diamond films.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.