Photoelectric sensor, information recording system, and information recording method
US5488601A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 1993 |
| Grant date | Jan 30, 1996 |
| Priority date | — |
| Expiry date | Oct 26, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N5/30
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An information recording system including a photoelectric sensor being semiconductive and having a photoconductive layer stacked on an electrode, and an information recording medium having an information recording layer stacked on an electrode so that information can be recorded on the information recording layer by an electric field or electric charge. The photoelectric sensor and the information recording medium are disposed to face each other, and information exposure is carried out with a voltage being applied between the two electrodes, thereby enabling information to be recorded on the information recording medium. The photoconductive layer of the photoelectric sensor is capable of amplifying an electric field or electric charge given to the information recording medium, so that the intensity of electric field or the amount of electric charge given to the information recording medium can be increased to a level higher than the light energy actually applied. Accordingly, information recording of high sensitivity can be performed even if information exposure is carried out with a relatively small light energy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.