Target for reactive sputtering and film-forming method using the target
US5489367A · kind A · utility
15Cited by
1References
6Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 19, 1994 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Aug 19, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A target for use in reactive sputtering for forming a film by a reaction with nitrogen, which is a target being composed substantially of titanium and nitrogen and having a nitrogen/titanium atomic ratio, N/Ti, of 0.20 to 0.95, and is used for forming a film whose nitrogen ratio is greater than a ratio of nitrogen to titanium in the target by a reaction with a sputtering gas containing nitrogen, and a method for forming a film, which uses the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.