Method of manufacturing an integrated circuit having a charge coupled device and a MOS transistor
US5489545A · kind A · utility
9Cited by
21References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 14, 1994 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Mar 14, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/891
Abstract
An integrated circuit comprises a charge coupled device and an MOS transistor. The charge coupled device has a lower and an upper gate electrode on the substrate. The insulating film between the substrate and the electrodes comprises silicon nitride. The insulating film between the electrodes is formed by thermal oxidizing the lower gate electrode using the silicon nitride film as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.