Method of fabricating n-type antimony-based strained layer superlattice
US5489549A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 14, 1994 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Apr 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High speed Group III-Sb materials are n-doped in a molecular beam epitaxy process by forming a superlattice with n-doped strained layers of a Group III-V compound upon Group III-Sb base layers. The base layers have lower conduction band energy levels than the strained layers, and allow doping electrons from the strained layers to flow into the base layers. The base layers preferably comprise Al.sub.x Ga.sub.1-x Sb, while the strained layers preferably comprise a binary or ternary compound such as Al.sub.y Ga.sub.1-y As having a single Group V component, where x and y are each from 0 to 1.0. The strained layers can be n-doped with silicon or tin, which would produce p-type doping if added directly to the base layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.