Opto-electronic integrated circuit
US5489798A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1994 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Jun 29, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/241
Abstract
In an opto-electronic integrated circuit of the present invention, in a first surface region of a semiconductor substrate, a pin-type photodiode is constituted on the basis of a photodiode layer formed on a first transistor layer. In a second surface region of the semiconductor substrate, a heterojunction bipolar transistor is constituted on the basis of only a second transistor layer separated form the first transistor layer. Since a plurality of heterojunction bipolar transistors are normally integrated for one pin-type photodiode, the thickness of the heterojunction bipolar transistors larger in number than the pin-type photodiode is set regardless of the thickness of the pin-type photodiode. The thickness of a high-resistance layer in the pin-type photodiode is set with an increased degree of freedom. When the first surface region of the semiconductor substrate is the inner region of a recessed step portion, and the second surface region of the semiconductor substrate is the outer region of the recessed step portion, a difference in thickness between the heterojunction bipolar transistor and the pin-type photodiode is absorbed by the depth of the recessed step portion. For this…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.