Semiconductor integrated circuit module and a semiconductor integrated circuit device stacking the same
US5490041A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 4, 1994 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Apr 4, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plurality of memory modules are stacked so as to form a multilayer integrated memory circuit. All of the memory modules have a plurality of bare memory IC chips mounted thereon, and have the same structure, the same circuit configuration and the same terminal arrangement in lead frames with each other. Each of the memory modules to be stacked in each layer is rotated by 90.degree., 180.degree. or 270.degree. before being stacked and connected to each other. Thus, in the multi-layered memory circuit, it is possible that signals can be selectively input/output to/from a particular layer in the multilayer structure, although the lead terminals of each of memory modules has the same configuration and the same arrangement with each other. As a result, a small-size integrated memory circuit device with a large memory-capacity can be provided, which can be fabricated easily and efficiently. A higher processing speed of digital computers can be also achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.