Semiconductor memory device including a component having improved breakdown voltage characteristics
US5490116A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 1993 |
| Grant date | Feb 6, 1996 |
| Priority date | — |
| Expiry date | Nov 12, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a semiconductor memory device including a boosting circuit for generating a high voltage constantly, and a word line driving circuit for transmitting a high voltage from the boosting circuit on a selected word line, a capacitor for stabilizing the high voltage generated by the boosting circuit is formed of a series of capacitive elements using a FET having a gate insulating film identical in thickness to that of a insulating gate type field effect transistor in the memory device. A voltage applied across each capacitive element is relaxed, and the capacitor is improved in dielectric breakdown voltage characteristics, to stably supply the high voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.