Light emitting diode and process for fabricating the same
US5491350A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1994 |
| Grant date | Feb 13, 1996 |
| Priority date | — |
| Expiry date | Jun 30, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/814
Abstract
Disclosed is a light emitting diode in which double hetero-structure epitaxial layers defining a light emitting portion are connected with a substrate by a mesa portion, and a cavity layer is formed by providing a mesa portion between the substrate and an adjoining layer of the epitaxial layers. Resin may be put into the cavity layer. Also provided is a process for fabricating a light emitting diode wherein the process comprises the steps of growing an AlGaAs layer with high mixed crystal ratio as a sacrificial layer, growing the epitaxial layers on the sacrificial layer to be connected with the mesa portion, and dissolving and removing the sacrificial layer to form the cavity layer. Light is reflected at the interface between a clad layer and the cavity layer or the resin put into the cavity layer, as a consequence, a light-emitting output can be improved. A thick AlGaAs layer with high AlAs mixed crystal ratio for the substrate is not required to be provided, so that the fabrication becomes easy, and uniformity in characteristics can be obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.