Dual-sided push-pull amplifier
US5491449A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1993 |
| Grant date | Feb 13, 1996 |
| Priority date | — |
| Expiry date | Nov 19, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3011
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
A Dual-Sided Push-Pull Amplifier for providing a high-gain yet low-cost amplifier capable of operating at frequencies extending above 1 GHz is disclosed. The present invention may be used in any application in which low cost amplification may be desired, including transmitters, antenna arrays, radars, light wave modulators, mixers, local oscillators, driver amplifiers and microwave ovens. One of the preferred embodiments of the invention (10d/10e) utilizes two pairs of field effect transistors (FETs) (22U and 22L & 24U and 24L) mounted in registration on both faces (12a & 12b) of a dual-sided dielectric substrate (12). The sources (22US and 22LS & 24US and 24US) on both faces of the FETs (22 & 24) are electrically coupled and are located at a minimum distance from their mates on the opposite faces of the substrate (12) to reduce inter-FET source lead inductance. The FETs (22 & 24) are coupled to a set of conductors (16a, 16b, 16c & 16d) which are formed on the substrate (12). These conductors (16a, 16b, 16c & 16d) are deployed in a substantially symmetric pattern about the active devices (14d & 14e) as opposing pairs in registration across the substrate (12), and are located in pos…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.