Magnetic field sensor on elemental semiconductor substrate with electric field reduction means
US5491461A · kind A · utility
51Cited by
11References
20Claims
0Family size
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Key dates
| Filing date | May 9, 1994 |
| Grant date | Feb 13, 1996 |
| Priority date | — |
| Expiry date | May 9, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N59/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A magnetic field sensor apparatus that comprises an active layer of indium antimonide or indium arsenide supported on an elemental semiconductor substrate. Magnetoresistor sensors of indium antimonide and indium arsenide active layers on silicon and germanium substrate wafers are described. Means are described for providing reduced electric fields and parasitic conduction in the elemental semiconductor substrate. The means includes unique device geometries and buffer layers between the active layers and the substrate wafers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.