Method for self-stabilizing deposition of a stoichiometric compound by reactive sputtering
US5492606A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 23, 1993 |
| Grant date | Feb 20, 1996 |
| Priority date | — |
| Expiry date | Dec 23, 2013 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/0036
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method for self-stabilizing deposition of a stoichiometric compound by reactive sputtering using a cold plasma. A reactive gas is supplied to a target, the instantaneous power applied to the target is cyclically reduced and increased at a frequency sufficiently low that a reaction between the target material and the reactive gas takes place on the surface of the target, and the product of the reaction is then sputtered off the surface of the target and onto a substrate. The alternating decrease and increase of the instantaneous power applied to the target at low frequency provides for self-stabilizing deposition of the reaction product on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.