Method for the controlled delivery of vaporized chemical precursor to an LPCVD reactor
US5492724A · kind A · utility
12Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 22, 1994 |
| Grant date | Feb 20, 1996 |
| Priority date | — |
| Expiry date | Feb 22, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4402
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Method and apparatus for the controlled delivery of vaporized chemical precursor to a low pressure chemical vapor deposition (LPCVD) reactor. A flow of liquid precursor containing dissolved inert gas is passed through a restrictor element. The dissolved inert gas is released from the liquid precursor at or near the downstream side of the restrictor element. The inert gas is separated from the liquid precursor, thereby producing a continuous flow of liquid precursor, and this flow is fed into an inlet of a-vaporizer. The vaporized precursor is delivered into an LPCVD reactor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.