Method of manufacturing semiconductor device
US5492854A · kind A · utility
23Cited by
7References
10Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 14, 1994 |
| Grant date | Feb 20, 1996 |
| Priority date | — |
| Expiry date | Dec 14, 2014 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/974
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes the step of forming a capacitor. The step includes the step of forming a lower electrode constituted by a polysilicon film which selectively covers a surface of a predetermined insulating film on a semiconductor substrate, and the step of performing heating in an atmosphere containing an SiH.sub.4 gas and removal of a native oxide film on a surface of the lower electrode, and then performing formation of a silicon nitride film without being exposed to an oxygen atmosphere.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.