Integrated circuit for sensing an environmental condition and producing a high power circuit
US5493248A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 24, 1992 |
| Grant date | Feb 20, 1996 |
| Priority date | — |
| Expiry date | Aug 24, 2012 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01D3/028
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An environmental sensor integrated with high current drive device is provided. An environmental sensor is fabricated on a semiconductor substrate using conventional MOS process used for N-well CMOS logic and DMOS power transistors. An N-well is preferably used as a junction etch stop for micromachining of mechanical sensor components. A high voltage P-type region is used to electrically isolate the high current device from the sensor device. By locating the sensor device away from the high current drive device on a common semiconductor substrate, good performance can be achieved from the sensor even while the high current device dissipates a large amount of power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.