Efficient semiconductor light-emitting device and method
US5493577A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 21, 1994 |
| Grant date | Feb 20, 1996 |
| Priority date | — |
| Expiry date | Dec 21, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8162
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.