Field-emitter having a sharp apex and small-apertured gate and method for fabricating emitter
US5494179A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 1994 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | Jul 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2201/319
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The invention is a field-emission element having a cathode with a sharp apex and a gate with an aperture diameter less than 1 .mu.m that is fabricated by covering a silicon substrate with a silicon oxide layer, forming an etching mask of 1.0 .mu.m diameter from a silicon oxide layer by photolithography, wet-etching the etching mask to form a minute etching mask of less diameter, dry etching the substrate to form a cylindrical solid structure, followed by anisotropic etching to form a couple of minute conical-shaped structures facing each other and connected by their respective tops, vacuum evaporating around the minute structures an insulating layer and thereon a conducting layer for use as a gate electrode, and etching the minute structure to lift off the upper part of the minute conical shaped structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.