Enhancement in throughput and planarity during CMP using a dielectric stack containing HDP-SiO.sub.2 films
US5494854A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 17, 1994 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | Aug 17, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76819
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and process for making the same are disclosed which uses a dielectric stack to improve fabrication throughput, gap-fill, planarity, and within-wafer uniformity. A gap-fill dielectric layer 34 (which preferably contains an integral seed layer) is first deposited over conductors 22, 24, and 26. Layer 34 is preferably a high density plasma (HDP) silicon dioxide deposition which planarizes high aspect ratio conductors such as 24, 26 but does not necessarily planarize low aspect ratio conductors such as 22. A dielectric polish layer 40, which preferably polishes faster than the gap-fill layer may be deposited over layer 34. The polish layer may be formed, for example, by plasma chemical vapor deposition of TEOS. Finally, a chemical-mechanical polishing process is used to planarize the dielectric stack in a manner which requires a minimal polishing time and produces a highly planarized structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.