Semiconductor device
US5495118A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Oct 17, 1994 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | Oct 17, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D89/811
Abstract
Between an external terminal and the gate of one of output MOSFETs whose source or drain is connected to the external terminal, there is connected a P-channel type first protective MOSFET whose gate is connected to a high voltage side power supply terminal and which has a channel length equal to or larger than that of the output MOSFET, or an N-channel type second protective MOSFET whose gate is connected to a low voltage side power supply terminal and which has a channel length equal to or larger then that of the output MOSFET. When the external terminal is discharged by device charge, one of the protective MOSFETs is turned on, and the charge on the gate side of the output MOSFET can be likewise released by device charge to prevent ESD (Electro-Static Discharge) breakdown.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.