Magnetoresistive sensor with improved performance and processability
US5495378A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 1995 |
| Grant date | Feb 27, 1996 |
| Priority date | — |
| Expiry date | Jan 30, 2015 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/40
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An MR sensor having improved current density distribution, reduced overall resistance and a substantially planar surface is disclosed. The MR sensor includes an MR layer having first and second outer regions and an active region located between the first and second outer regions. A first permanent magnet region is formed upon the first MR layer outer region and defines a first boundary of the MR layer active region. A second permanent magnet region is formed upon the second MR layer outer region and defines a second boundary of the MR layer active region so that a gap region is positioned at least partially between the first and second permanent magnet regions. A spacer layer is formed on the MR layer active region between the first and second permanent magnet regions. A soft adjacent layer is formed in the active region and upon the spacer layer, and, in some preferred embodiments, also at least partially upon the permanent magnet region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.