Hydrogen fluoride dopant source in the preparation of conductive coated substrate
US5496583A · kind A · utility
5Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 29, 1994 |
| Grant date | Mar 5, 1996 |
| Priority date | — |
| Expiry date | Aug 29, 2014 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/152
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to the production of hydrogen fluoride dopant source gases for use in the production of conductive coatings on a substrate. More specifically, a fluorocarbon source gas is decomposed in the presence of oxygen to yield HF which is passed to a deposition furnace wherein a fluoride doped metal oxide coated glass substrate is prepared.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.