Ion generating source for use in an ion implanter
US5497006A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 15, 1994 |
| Grant date | Mar 5, 1996 |
| Priority date | — |
| Expiry date | Nov 15, 2014 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31701
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source embodying the present invention is for use in an ion implanter. The ion source comprises a gas confinement chamber having conductive chamber walls that bound a gas ionization zone. The gas confinement chamber includes an exit opening to allow ions to exit the chamber. A base positions the gas confinement chamber relative to structure for forming an ion beam from ions exiting the gas confinement chamber. A gas supply is in communication with the gas confinement chamber for conducting an ionizable gas into the gas confinement chamber. A cathode is supported by the base and positioned with respect to said gas confinement chamber to emit ionizing electrons into the gas ionization zone. The cathode comprises a tubular conductive body that partially extends into the gas confinement chamber and includes a conductive cap that faces into the gas confinement chamber for emitting ionizing electrons into the gas confinement chamber. A filament is supported by the base at a position inside the tubular conductive body of the cathode for heating the cap and cause the ionizing electrons to be emitted from the cap into the gas confinement chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.