High-voltage semiconductor device
US5497010A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1993 |
| Grant date | Mar 5, 1996 |
| Priority date | — |
| Expiry date | Jun 16, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/00
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
The high-voltage semiconductor device includes a single chip having a plurality of semiconductor elements connected in series with each other which includes an insulating substrate (2); a monocrystalline semiconductor carrier (1) of a first conductivity type applied to the insulating substrate (2); at least two terminals (5,6) located on opposite sides of the chip; strip-like areas (3) of a second conductivity type formed in the monocrystalline semiconductor carrier (1), the strip-like areas (3) each extending across the semiconductor carrier (1) at right angles to a longitudinal direction between the at least two terminals, forming pn junctions in the semiconductor carrier (1), being spaced from each other in the longitudinal direction over the single chip and penetrating an entire thickness of the semiconductor carrier; at least one doped region (7) in the strip-like areas (3) forming an at least four layered component in the single chip; and a light responsive device for reducing a switching voltage of the single chip when the pn junctions are irradiated with light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.