Active RF cavity including a plurality of solid state transistors
US5497050A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 11, 1993 |
| Grant date | Mar 5, 1996 |
| Priority date | — |
| Expiry date | Jan 11, 2013 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H7/18
- WIPO fieldChemical engineering
- WIPO sectorChemistry
Abstract
An active RF cavity is defined by a conductive wall in which a plurality of solid state power amplifiers are mounted. The solid state power amplifiers induce an RF current at an inner surface of the wall to form an oscillating electromagnetic (EM) field within the cavity. Preferably, the power amplifiers are in the form of modules that contain a number of RF power chips. The structure operates as both a power combiner and a matching transformer and is powered by a relatively low voltage d.c. source. A high-amplitude field is generated using equipment that is more efficient and much lighter in weight than conventional equipment. Such a cavity may be applied in a drift tube linac, an RF quadrupole linac, a linac having aligned cavities, and in other types of particle accelerators, and as a high power RF amplifier with the EM waves piped out via a waveguide or a coaxial cable.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.